Binary mask optimization for forward lithography based on boundary layer model in coherent systems: erratum.

F w n [1], we presented simulations to illustrate the characeristics of the proposed binary mask optimization algoithm. However, an error was made in the aerial image alculation. In addition, the range of the point-spread unction was overly truncated. We would like to correct hese errors and modify the previous simulations in this rratum. The correct simulations are illustrated as folows. The desired aerial image is shown in Fig. 1. In Fig. 1, p s the pitch width. For the first type of optical lithography ystem, p=223.2 nm on the wafer, and the system paramters are NA=0.68 and =248 nm. Since the system is 4 projection system, the pitch width of the initial inerior transmission area pattern ̃ on the mask is 92.8 nm=4 p. In the simulation, the mask pattern has he dimensions 2.23 m 2.23 m. The pixel size is 4.8 nm 24.8 nm. The convolution kernel is